English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 13.75 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-FBGA (9x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25LC010A/S16KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ DIE |
|
|
MT53B256M64D2NK-062 WT ES:C TRMicron Technology |
IC DRAM 16GBIT 1600MHZ FBGA |
|
|
CG8320AACypress Semiconductor |
IC SRAM MICROPOWER |
|
|
S29WS128N0SBFW012Cypress Semiconductor |
IC MEMORY NOR |
|
|
93LC46A-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ DIE |
|
|
AS4C512M32MD3-15BCNTRAlliance Memory, Inc. |
IC DRAM 16GBIT PARALLEL 178FBGA |
|
|
MT29VZZZ7C7DQFSL-046 W.9J7 TRMicron Technology |
280G |
|
|
M58LT256KST7ZA6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64TBGA |
|
|
16-3508-02Cypress Semiconductor |
IC GATE NOR |
|
|
MT25QL128QLHS8E3WC2-0AATMicron Technology |
SLC 128M DIE 32MX4 |
|
|
CG8280AACypress Semiconductor |
IC MEMORY F-RAM SER 8SOIC |
|
|
MT29F3T08EQCBBG2-37ES:B TRMicron Technology |
IC FLASH 3TB PARALLEL 272TBGA |
|
|
7024L35PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
