English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 64Kb (4K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25LC080B-I/WF15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ DIE |
|
|
MSM5118165F-60J3-7ROHM Semiconductor |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
|
DC0232A-DMicron Technology |
DDR SDRAM 16MX128 PLASTIC TFBGA |
|
|
MT46H64M32LFCX-5 AT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
|
M29W640GT70NA6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
|
MT41J128M16JT-093G:KMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
|
24LC00/WRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ DIE |
|
|
MT53B384M32D2NP-062 WT:B TRMicron Technology |
IC DRAM 12GBIT 1600MHZ 200WFBGA |
|
|
MT29C1G12MAADVAML-5 ITMicron Technology |
IC FLASH RAM 1GBIT PAR 153VFBGA |
|
|
CMSNRECypress Semiconductor |
MICROPOWER SRAM |
|
|
M29W640GB70ZS6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
|
PC28F064M29EWHAMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
|
MT41K1G8TRF-125 IT:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
