类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-FBGA (8.15x6.15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F16G08ABACAWP-Z:CMicron Technology |
IC FLASH 16GBIT PARALLEL 48TSOP |
|
AT49SV163D-80CURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |
|
93C46C-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ DIE |
|
MT29F2T08CVCBBG6-6R:B TRMicron Technology |
IC FLASH 2TB PARALLEL 272LFBGA |
|
25LC040A/W16KRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ DIE |
|
MT29F256G08AMEBBH7-12:B TRMicron Technology |
IC FLASH 256GBIT PAR 152TBGA |
|
MT29TZZZ5D6DKFRL-107 W.9A6Micron Technology |
MLC EMMC/LPDDR3 144G |
|
MT29F512G08CUCABH3-10Z:AMicron Technology |
IC FLASH 512GBIT PAR 100LBGA |
|
M29F400BT70M1Micron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
|
M29F200FT55M3E2Micron Technology |
IC FLASH 2MBIT PARALLEL 44SO |
|
MT51K256M32HF-50 N:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 1.25GHZ |
|
MTFC16GLUAM-WTMicron Technology |
IC FLASH 128GBIT MMC 153VFBGA |
|
S99FL132KI010Cypress Semiconductor |
IC FLASH NOR |