| 类型 | 描述 |
|---|---|
| 系列: | SST39 MPF™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 40µs |
| 访问时间: | 70 ns |
| 电压 - 电源: | 1.65V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | - |
| 包/箱: | Die |
| 供应商设备包: | Wafer |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
S29CD032J0PFAM010Cypress Semiconductor |
IC MEMORY NOR SMD |
|
|
MT53B4DBNH-DCMicron Technology |
IC DRAM 24GBIT 272WFBGA |
|
|
MT29F256G08CKCDBJ5-6R:DMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
|
CG8406AATCypress Semiconductor |
IC SRAM |
|
|
STK14C88A-WAFCypress Semiconductor |
IC NVSRAM 256KBIT PARALLEL |
|
|
MT47H32M16HR-25E AAT:G TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
|
MT47H256M8THN-25E:MMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
|
MT29F256G08CKCDBJ5-6R:D TRMicron Technology |
IC FLASH 256GBIT PAR 132TBGA |
|
|
S99FL116KI000Cypress Semiconductor |
IC FLASH NOR |
|
|
S99AL016J0290 PCypress Semiconductor |
IC GATE NOR |
|
|
MT29F2G08ABAFAH4-IT:F TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
|
MT47H32M16HR-25E AIT:G TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
|
MT29F2G01ABAGDM79A3WC1Micron Technology |
SLC 2G DIE 2GX1 |