类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 8Gb (512M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-LFBGA |
供应商设备包: | 96-LWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST26VF064BT-104V/TDRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/QUAD 24TBGA |
|
70V27S25PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IS62WV25616EBLL-45TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
7005S25PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
MTFC4GLYAM-WTMicron Technology |
IC FLASH 32GBIT MMC 153VFBGA |
|
MT61M256M32JE-12 N:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 180FBGA |
|
MT29F4G16ABAEAH4-IT:EMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT42L256M64D4LD-18 WT:A TRMicron Technology |
IC DRAM 16GBIT PARALLEL 220FBGA |
|
MT53D512M64D8HR-053 WT:B TRMicron Technology |
IC DRAM LPDDR4 32G SMD |
|
MT53D512M32D2NP-046 WT ES:E TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
ECF620AAACN-C1-Y3-ESMicron Technology |
LPDDR3 6G DIE 192MX32 |
|
S99GL032N0070Cypress Semiconductor |
IC FLASH |
|
25AA010A/WF16KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ DIE |