类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S99AL016J0210Cypress Semiconductor |
IC GATE NOR |
|
MTFC64GAPALNA-AIT ES TRMicron Technology |
EMMC 512GBIT MMC5.1 J58X AT |
|
7026L55J/S2703Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
0791076249RQA00Cypress Semiconductor |
IC MEM NOR |
|
AK6508DTSAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KB SPI 10MHZ 8WLCSP |
|
MT35XU01GBBA1G12-0AAT TRMicron Technology |
IC FLSH 1GBIT XCCELA BUS 24TPBGA |
|
MTFC64GAJAEDN-AAT TRMicron Technology |
IC FLASH 512GBIT MMC 169LFBGA |
|
S99GL064N90BFI040Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
MT41K256M4JP-15E:GMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
S29GL512N10FAI010Flip Electronics |
FLASH, 32MX16, 100NS, PBGA64 |
|
S99GL032N90BFI040Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
EMB4432BBBBJ-DV-F-DMicron Technology |
SPEC/CUSTOM IC SDRAM LPDDR2 WFBG |
|
MT53D256M16D1NY-046 XT ES:B TRMicron Technology |
IC DRAM 16GBIT 2133MHZ FBGA |