类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S98WS512N0GFW0090ECypress Semiconductor |
IC FLASH |
|
24AA256SC-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 400KHZ DIE |
|
MT52L4DAPQ-DCMicron Technology |
SPECIAL/CUSTOM LPDDR3 |
|
MTFC8GACAANA-4M IT TRMicron Technology |
IC FLASH 64GBIT MMC 100TBGA |
|
MT49H64M9FM-25:B TRMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
M27C256B-90C1STMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
MT47H128M4SH-25E:H TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MTFC16GAKAECN-AITMicron Technology |
IC FLASH 128GBIT MMC 153VFBGA |
|
70V28L15PFI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
M29DW323DB5AN6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 48TSOP |
|
70V07S35JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
CG7925AMCypress Semiconductor |
IC SRAM MICROPOWER |
|
24AA64-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ DIE |