English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 128Gb (16G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 100 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 132-TBGA |
| 供应商设备包: | 132-TBGA (12x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7133LA25JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
25AA080A-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ DIE |
|
|
AT49BV160-70CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 45CBGA |
|
|
IS61WV1288EEBLL-8TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
|
MT41K64M16JT-125:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
|
MT49H16M36BM-18:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
|
MT41K512M8RH-107:EMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
S99PL127J0240 PCypress Semiconductor |
IC FLASH MEM NOR 80FBGA |
|
|
M58WR032KU70ZA6U TRMicron Technology |
IC FLASH 32MBIT PARALLEL 44VFBGA |
|
|
DS28E01P-W0N+1Maxim Integrated |
IC EEPROM |
|
|
M29F400FT55N3E2Micron Technology |
IC FLASH 4MBIT PARALLEL 44SO |
|
|
MT53B512M64D4NK-062 WT ES:CMicron Technology |
IC DRAM 32GBIT 1600MHZ 366WFBGA |
|
|
M27C256B-90C6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 32PLCC |
