类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-FBGA (8x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT40A1G8WE-083E AAT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
7130LA55TFIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
MT47H256M8THN-3:H TRMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
MT53E1G64D8NW-053 WT:EMicron Technology |
LPDDR4 64G 1GX64 FBGA WT 8DP |
|
70261S35PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
PC28F512P30BFB TRMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
M50FW040N5TG TRMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP |
|
MT53D384M64D4NY-046 XT:DMicron Technology |
IC DRAM 24GBIT 2133MHZ FBGA |
|
MTFC32GAKAEJP-4M IT TRMicron Technology |
IC FLASH 256GBIT MMC 153VFBGA |
|
CG8223AACypress Semiconductor |
IC SRAM 4MB FAST |
|
DS2502-UNW-1155+Maxim Integrated |
IC INTEGRATED CIRCUIT |
|
MT53E512M32D2NP-046Micron Technology |
LPDDR4 16G 512MX32 FBGA WT DDP |
|
W25Q128JVTIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI 133MHZ |