类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 32Kb (2K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-LCC (J-Lead) |
供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S99PL064J0110 PCypress Semiconductor |
IC FLASH MEM NOR 48FBGA |
|
MTFC32GAPALNA-AAT ES TRMicron Technology |
IC FLASH 256GBIT MMC 100TBGA |
|
CG8083AACypress Semiconductor |
IC SRAM NONVOLATILE |
|
S99GL128P0060Cypress Semiconductor |
IC FLASH |
|
N25Q064A13E14D1EMicron Technology |
IC FLASH 64MBIT SPI 24TPBGA |
|
CG7859AATCypress Semiconductor |
IC SRAM MICROPOWER 44TSOP II |
|
70P245L65BYGI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100CABGA |
|
MT29C1G12MAADYAKD-5 ITMicron Technology |
IC FLASH RAM 1GBIT PAR 137TFBGA |
|
MT40A4G4NEA-062E:JMicron Technology |
SDRAM DDR4 16G 4GX4 BGA |
|
MT53E128M16D1DS-046 AIT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
MT29F128G08AMAAAC5-ITZ:AMicron Technology |
IC FLASH 128GBIT PARALLEL 52VLGA |
|
MT29VZZZAC8FQKSL-053 W ES.G8FMicron Technology |
ALL IN ONE MCP 3264G |
|
AK6508DUAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KBIT SPI 10MHZ 8USON |