类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 2Tb (256G x 8) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.5V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29F040B70K1Micron Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
1072732-00-ACypress Semiconductor |
IC FLASH |
|
MT29F384G08EBCBBB0KB3WC1Micron Technology |
IC FLASH 384GBIT PARALLEL WAFER |
|
M24C32S-FCU6T/TFSTMicroelectronics |
IC EEPROM 32KBIT I2C 1MHZ 4WLCSP |
|
MT29F128G08EBEBBWPES:B TRMicron Technology |
IC FLASH 128GBIT PARALLEL 48TSOP |
|
M27C512-90C1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
M29F200FB55M3F2 TRMicron Technology |
IC FLASH 2MBIT PARALLEL 44SO |
|
MT53E256M16D1DS-046 AIT:B TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
MT53D4DASB-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
S99-50278Cypress Semiconductor |
IC GATE NOR |
|
MTFC8GAMALNA-AIT TRMicron Technology |
IC FLASH 64GBIT MMC 100TBGA |
|
MT53B512M16D1Z11MWC2 MSMicron Technology |
LPDDR4 8G DIE 512MX16 |
|
MT46H64M32L2JG-6:A TRMicron Technology |
IC DRAM 2GBIT PARALLEL 168VFBGA |