类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 64Gb (8G x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V9079L9PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
MT29RZ4C4DZZMGGM-18W.80UMicron Technology |
IC FLASH RAM 4G PARALLEL 533MHZ |
|
MSP14LV320-E1-GH-001Cypress Semiconductor |
IC MEMORY FLASH NOR |
|
25CS640T-E/MSRoving Networks / Microchip Technology |
IC MEMORY EEPROM 64MB SPI |
|
CG8209AATCypress Semiconductor |
IC SRAM MICROPOWER |
|
S99GL256P0050Cypress Semiconductor |
IC FLASH |
|
24AA64-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ DIE |
|
24LC64-I/W15KRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ DIE |
|
CG8016AMTCypress Semiconductor |
IC SRAM MICROPOWER |
|
MT53B512M64D4NW-062 WT:CMicron Technology |
IC DRAM 32GBIT 1600MHZ FBGA |
|
EDFA112A2PF-JD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 933MHZ |
|
CG8220AACypress Semiconductor |
IC SRAM ASYNC |
|
S99AL008J70BFI010Cypress Semiconductor |
IC FLASH MEMORY NOR |