English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 533 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 350 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43R32400E-4B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 144LFBGA |
|
|
W97BH2KBQX2IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
|
7130SA45JIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
|
MT53D8DBNW-DCMicron Technology |
LPDDR4 16G FBGA 8DP |
|
|
MT29F512G08CMEABH7-12:A TRMicron Technology |
IC FLASH 512GBIT PAR 152TBGA |
|
|
SFEM4096B1EM1TO-I-GE-111-STDSwissbit |
IC FLSH 32GBIT EMMC 52MHZ 153BGA |
|
|
M29W256GL7AN6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
|
MT53B512M32D2GZ-062 WT ES:B TRMicron Technology |
IC DRAM 16GBIT 1600MHZ 200WFBGA |
|
|
MT53D256M64D4NY-046 XT ES:BMicron Technology |
IC DRAM 16GBIT 2133MHZ FBGA |
|
|
S99-50282Cypress Semiconductor |
IC GATE NOR |
|
|
7133LA55JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
SM662PEE-BDSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 3D TLC |
|
|
7015L12JRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 68PLCC |
