类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 48Gb (768M x 64) |
内存接口: | - |
时钟频率: | 1.6 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EDF8164A3PK-JD-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
|
70P259L90BYGI8Renesas Electronics America |
IC SRAM 128KBIT PAR 100CABGA |
|
70V07S55JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
IS46TR16512A-15HBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
M27C512-70C1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
16-3628-01-TCypress Semiconductor |
IC GATE NOR |
|
S99GL128P0100Cypress Semiconductor |
IC FLASH |
|
MT29F4G08ABBFAH4-AATES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
7133SA35JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
SM662PEC-BDSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 3D TLC |
|
MT49H16M18BM-33 TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
MT53D4DBKA-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
M25PE10-VD11Micron Technology |
IC FLASH 1MBIT SPI 75MHZ DIE |