IC RF AMP GP 0HZ-2.2GHZ 6TSSOP
MT53D1024M32D4NQ-046 AIT ES:D TR
IC DRAM 32GBIT 2133MHZ 200VFBGA
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 32Gb (1G x 32) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-VFBGA |
供应商设备包: | 200-VFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B512M64D4NZ-062 WT ES:DMicron Technology |
IC DRAM 32GBIT 1600MHZ FBGA |
|
MT46H256M32L4JV-6 WT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 168VFBGA |
|
RC28F128J3F75B TRMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
CG8240AATCypress Semiconductor |
IC SRAM ASYNC |
|
IDT70824S35GRenesas Electronics America |
IC RAM 64KBIT PARALLEL 84PGA |
|
MT29F8G16ABACAH4-IT:CMicron Technology |
IC FLASH 8GBIT PARALLEL 63VFBGA |
|
MT29F4G16ABADAH4-AAT:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
M29W640GT90NA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
S99ML01G100TFI003SkyHigh Memory Limited |
IC MEMORY FLASH NAND 48-TSOP |
|
MT41J1G4THD-15E:DMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
A2C00058602 ACypress Semiconductor |
IC FLASH NOR |
|
MT46V32M16CY-5B XIT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
580970-002-00Cypress Semiconductor |
IC FLASH |