类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR2 |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 168-WFBGA |
供应商设备包: | 168-WFBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT44K32M36RB-107E IT:AMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
MT53B512M32D2NP-053 WT:CMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
MT49H16M36BM-25E:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
MT53B384M64D4EZ-062 WT ES:BMicron Technology |
IC DRAM 24GBIT 1600MHZ FBGA |
|
CG7499AATCypress Semiconductor |
IC SRAM NON VOLATILE 48FBGA |
|
70V06S45JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
24AA16/W15KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ DIE |
|
MT41K512M8V00HWC1-N002Micron Technology |
IC DRAM 4GBIT PARALLEL |
|
M29F800FB55M3E2Micron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
S99-50292-TCypress Semiconductor |
IC FLASH |
|
M58WR032KB70ZB6ZMicron Technology |
IC FLASH 32MBIT PARALLEL 56VFBGA |
|
MT53D384M64D4FL-046 XT:E TRMicron Technology |
LPDDR4 24G 384MX64 FBGA XT QDP |
|
IS62WV5128EALL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 36TFBGA |