类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 90V |
电压 - 击穿(分钟): | 100V |
电压 - 钳位(最大值)@ ipp: | 160V |
电流 - 峰值脉冲 (10/1000µs): | 31.3A |
功率-峰值脉冲: | 5000W (5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | P600, Axial |
供应商设备包: | P600 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MXSMLG20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V DO215AB |
|
MXLSMCJ13CA/TRRoving Networks / Microchip Technology |
HI REL TVS |
|
JAN1N6117AUSRoving Networks / Microchip Technology |
TVS DIODE 22.8V 41.6V B SQ-MELF |
|
MAP6KE39AE3Roving Networks / Microchip Technology |
TVS DIODE 33.3V 53.9V T-18 |
|
SMCJ11CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
MXLPLAD6.5KP36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
MP6KE47AE3Roving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V T-18 |
|
MASMCG85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
|
1N5660ARoving Networks / Microchip Technology |
TVS DIODE 111V 179V DO13 |
|
MP6KE16ARoving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V T-18 |
|
MXPLAD30KP78CARoving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
MXLPLAD6.5KP20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V PLAD |
|
MXLP6KE120CAE3Roving Networks / Microchip Technology |
TVS DIODE 102V 165V T-18 |