English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/516 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | Zener |
| 单向通道: | - |
| 双向通道: | 1 |
| 电压 - 反向间隔（典型值）: | 22.8V |
| 电压 - 击穿（分钟）: | 28.5V |
| 电压 - 钳位（最大值）@ ipp: | 41.6V |
| 电流 - 峰值脉冲 (10/1000µs): | 12A |
| 功率-峰值脉冲: | 500W |
| 电源线保护: | No |
| 应用: | General Purpose |
| 电容@频率: | - |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SQ-MELF, B |
| 供应商设备包: | B, SQ-MELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MAP6KE39AE3Roving Networks / Microchip Technology |
TVS DIODE 33.3V 53.9V T-18 |
|
|
SMCJ11CAHE3_A/HVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
|
MXLPLAD6.5KP36CARoving Networks / Microchip Technology |
TVS DIODE 36V 58.1V PLAD |
|
|
MP6KE47AE3Roving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V T-18 |
|
|
MASMCG85AE3Roving Networks / Microchip Technology |
TVS DIODE 85V 137V DO215AB |
|
|
1N5660ARoving Networks / Microchip Technology |
TVS DIODE 111V 179V DO13 |
|
|
MP6KE16ARoving Networks / Microchip Technology |
TVS DIODE 13.6V 22.5V T-18 |
|
|
MXPLAD30KP78CARoving Networks / Microchip Technology |
TVS DIODE 78V 126V PLAD |
|
|
MXLPLAD6.5KP20ARoving Networks / Microchip Technology |
TVS DIODE 20V 32.4V PLAD |
|
|
MXLP6KE120CAE3Roving Networks / Microchip Technology |
TVS DIODE 102V 165V T-18 |
|
|
MX1.5KE47CAE3Roving Networks / Microchip Technology |
TVS DIODE 40.2V 64.8V CASE-1 |
|
|
JTX1N6116AUSSemtech |
T MET BI 500W 27V |
|
|
M1.5KE22ARoving Networks / Microchip Technology |
TVS DIODE 18.8V 30.6V CASE-1 |
