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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 类型: | - |
| 单向通道: | - |
| 双向通道: | - |
| 电压 - 反向间隔（典型值）: | - |
| 电压 - 击穿（分钟）: | - |
| 电压 - 钳位（最大值）@ ipp: | - |
| 电流 - 峰值脉冲 (10/1000µs): | - |
| 功率-峰值脉冲: | - |
| 电源线保护: | - |
| 应用: | - |
| 电容@频率: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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MXP6KE33AE3Roving Networks / Microchip Technology |
TVS DIODE 28.2V 45.7V T-18 |
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MASMCG110AE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AB |
|
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MPLAD18KP130CARoving Networks / Microchip Technology |
TVS DIODE 130V 209V PLAD |
|
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MAPLAD7.5KP11AE3Roving Networks / Microchip Technology |
TVS DIODE |
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MSMLG7.5CA/TRRoving Networks / Microchip Technology |
TVS |
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MXUPTB48E3Roving Networks / Microchip Technology |
TVS DIODE |
|
|
MXL1.5KE11AE3Roving Networks / Microchip Technology |
TVS DIODE 9.4V 15.6V CASE-1 |
|
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SMCJ40CAHE3_A/IVishay General Semiconductor – Diodes Division |
TVS DIODE DO214AB |
|
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MX1.5KE24AE3Roving Networks / Microchip Technology |
TVS DIODE 20.5V 33.2V CASE-1 |
|
|
5KP6.0CE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 6V 11.4V P600 |
|
|
JTX1N6162ASemtech |
T MET BI 1500W |
|
|
MXP6KE12ARoving Networks / Microchip Technology |
TVS DIODE 10.2V 16.7V T-18 |
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PESD4USB5U-TBRXNexperia |
TVS DIODE XSON10 |
