类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500 |
包裹: | Bulk |
零件状态: | Active |
类型: | Zener |
单向通道: | 1 |
双向通道: | - |
电压 - 反向间隔(典型值): | 154V |
电压 - 击穿(分钟): | 171V |
电压 - 钳位(最大值)@ ipp: | 246V |
电流 - 峰值脉冲 (10/1000µs): | 6.1A |
功率-峰值脉冲: | 1500W (1.5kW) |
电源线保护: | No |
应用: | General Purpose |
电容@频率: | - |
工作温度: | -65°C ~ 150°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | CASE-1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JTXV1N6103AUSSemtech |
T MET BI 500W 7.5V SM |
|
1N6124USRoving Networks / Microchip Technology |
TVS DIODE |
|
15KPA17AE3/TR13Roving Networks / Microchip Technology |
TVS DIODE 17V 29.3V P600 |
|
MXLPLAD36KP280CARoving Networks / Microchip Technology |
TVS DIODE 280V 451V PLAD |
|
MASMCGLCE22AE3Roving Networks / Microchip Technology |
TVS DIODE 22V 35.5V DO215AB |
|
MXLPLAD7.5KP12CARoving Networks / Microchip Technology |
TVS DIODE |
|
JANTXV1N5637ARoving Networks / Microchip Technology |
TVS DIODE 12.8V 21.2V DO13 |
|
MSMLJ150CA/TRRoving Networks / Microchip Technology |
TVS |
|
MPLAD18KP75CAE3Roving Networks / Microchip Technology |
TVS DIODE 7.5V 12.9V PLAD |
|
MAPLAD18KP18AE3Roving Networks / Microchip Technology |
TVS DIODE 18V 29.2V PLAD |
|
MALCE51AE3Roving Networks / Microchip Technology |
TVS DIODE 51V 82.4V CASE-1 |
|
TPSMB24AHM3_A/HVishay General Semiconductor – Diodes Division |
600W 24V 5% SMB PAR |
|
MXSMCG110CAE3Roving Networks / Microchip Technology |
TVS DIODE 110V 177V DO215AB |