1.8" TFT RESISTIVE TOUCH
DIODE GEN PURP 1KV 1A SUB SMA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 1000 V |
电流 - 平均整流 (io): | 1A |
电压 - 正向 (vf) (max) @ if: | 1.7 V @ 1 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 75 ns |
电流 - 反向泄漏@ vr: | 5 µA @ 1000 V |
电容@vr, f: | 15pF @ 4V, 1MHz |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | Sub SMA |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMSD103T1GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 250V 200MA SOD123 |
|
P600G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 6A P600 |
|
CDBB5200-HFComchip Technology |
DIODE SCHOTTKY 200V 5A DO214AA |
|
NRVTS2H60ESFT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY SOD123 |
|
1N4005G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
NSB8DTHE3_A/PVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
DSP10G-TR-ERochester Electronics |
DIODE GEN PURP 600V 1A 2SHP |
|
FR102GTASMC Diode Solutions |
DIODE GPP 100V 1A DO41 |
|
UF5406-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
|
PMEG3005EGWXNexperia |
DIODE SCHOTTKY 30V 500MA SOD123 |
|
BAV101 L1GTSC (Taiwan Semiconductor) |
DIODE GP 250V 200MA MINIMELF |
|
BAS321JFNexperia |
BAS321J/SOD323/SOD2 |
|
STPS15L25DSTMicroelectronics |
DIODE SCHOTTKY 25V 15A TO220AC |