类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
二极管型: | Standard |
电压 - 直流反向 (vr) (max): | 600 V |
电流 - 平均整流 (io): | 8A |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 8 A |
速度: | Fast Recovery =< 500ns, > 200mA (Io) |
反向恢复时间 (trr): | 50 ns |
电流 - 反向泄漏@ vr: | 10 µA @ 600 V |
电容@vr, f: | - |
安装类型: | Surface Mount |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
供应商设备包: | TO-263AB |
工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5312Solid State Inc. |
FED 3.9 MA DO35 |
|
VS-12FR60MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
|
ISL9R1560G2Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 15A TO247-2 |
|
TST30L60CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 15A TO220AB |
|
S1DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
JANTX1N5811Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 3A AXIAL |
|
VS-15EWH06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |
|
LSM840J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 8A DO214AB |
|
CFSH-4 TR PBFREECentral Semiconductor |
DIODE SCHOTTKY 40V 200MA SOD882 |
|
FS16SURGE |
1A -60V - ESGA (SOD-123FL) - REC |
|
VS-400U160DVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 400A DO205 |
|
UF4002HR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
BYW29-150-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A TO220AC |