类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 1.9A (Ta), 2.37A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
rds on (max) @ id, vgs: | 238mOhm @ 1.9A, 4.5V |
vgs(th) (最大值) @ id: | 1.3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 2.7 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 100 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.32W (Ta), 2.28W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SC-70-6 (SOT-363) |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STD16N60M2STMicroelectronics |
MOSFET N-CH 600V 12A DPAK |
|
IRFD220Rochester Electronics |
0.8A 200V 0.800 OHM N-CHANNEL |
|
TSM70NB1R4CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 3A TO252 |
|
FQP16N25CRochester Electronics |
MOSFET N-CH 250V 15.6A TO220-3 |
|
TK14A65W5,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 13.7A TO220SIS |
|
PN3685Rochester Electronics |
MOSFET N-CH TO-92 |
|
IPI023NE7N3GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RUF025N02FRATLROHM Semiconductor |
MOSFET N-CH 20V 2.5A TUMT3 |
|
IRLR014TRLPBFVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
IPW60R075CPFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 39A TO247-3 |
|
PMT200EPEXNexperia |
MOSFET P-CH 70V 2.4A SOT223 |
|
IRFL4310TRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 1.6A SOT223 |
|
STP5NK50ZFPSTMicroelectronics |
MOSFET N-CH 500V 4.4A TO220FP |