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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 二极管型: | Schottky |
| 电压 - 直流反向 (vr) (max): | 50 V |
| 电流 - 平均整流 (io): | 1mA |
| 电压 - 正向 (vf) (max) @ if: | 410 mV @ 1 mA |
| 速度: | Small Signal =< 200mA (Io), Any Speed |
| 反向恢复时间 (trr): | - |
| 电流 - 反向泄漏@ vr: | 200 nA @ 50 V |
| 电容@vr, f: | 2pF @ 0V, 1MHz |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
| 工作温度 - 结: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTX1N6643URoving Networks / Microchip Technology |
DIODE GEN PURP 50V 300MA B-MELF |
|
|
VS-95PFR160Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 95A DO203AB |
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|
1N3742Powerex, Inc. |
RECTIFIER STUD MOUNT DO-9 |
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FFSD2065BSanyo Semiconductor/ON Semiconductor |
SILICON CARBIDE SCHOTTKY DIODE 6 |
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|
S70YRGeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV 70A DO5 |
|
|
1N4003GR0TSC (Taiwan Semiconductor) |
1A,200V,STD.GLASS PASSIVATED REC |
|
|
1N3176Roving Networks / Microchip Technology |
STANDARD RECTIFIER |
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|
JTX1N5553USSemtech |
D MET 3A STD 800V HR SM |
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BYG20DHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A DO214 |
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US2K-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 80 |
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|
BYC10X-600PQ127Rochester Electronics |
HYPERFAST RECTIFIER DIODE |
|
|
PU1BMH M3GTSC (Taiwan Semiconductor) |
25NS, 1A, 100V, ULTRA FAST RECOV |
|
|
XBS053P11R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |
