类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
二极管型: | - |
电压 - 直流反向 (vr) (max): | - |
电流 - 平均整流 (io): | - |
电压 - 正向 (vf) (max) @ if: | - |
速度: | - |
反向恢复时间 (trr): | - |
电流 - 反向泄漏@ vr: | - |
电容@vr, f: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
工作温度 - 结: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BYG20DHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A DO214 |
|
US2K-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 80 |
|
BYC10X-600PQ127Rochester Electronics |
HYPERFAST RECTIFIER DIODE |
|
PU1BMH M3GTSC (Taiwan Semiconductor) |
25NS, 1A, 100V, ULTRA FAST RECOV |
|
XBS053P11R-GTorex Semiconductor Ltd. |
SCHOTTKY BARRIER DIODE |
|
SD040SC200A.T1SMC Diode Solutions |
PIV 200V IO 1A CHIP SIZE 40MIL S |
|
S1KW16KA-1Semtech |
DIODE GEN PURP 16KV 2A SMD |
|
US2DWF-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 20 |
|
JAN1N5809USRoving Networks / Microchip Technology |
DIODE GEN PURP 100V 6A B-MELF |
|
R5031218FSWAPowerex, Inc. |
DIODE GEN PURP 1.2KV 175A DO205 |
|
WNSC101200CWQWeEn Semiconductors Co., Ltd |
SILICON CARBIDE POWER DIODE |
|
HER601G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 6A R-6 |
|
1N6677-1Roving Networks / Microchip Technology |
RECTIFIER DIODE |