English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 二极管型: | Standard |
| 电压 - 直流反向 (vr) (max): | 2500 V |
| 电流 - 平均整流 (io): | 3A |
| 电压 - 正向 (vf) (max) @ if: | 3.45 V @ 3 A |
| 速度: | Standard Recovery >500ns, > 200mA (Io) |
| 反向恢复时间 (trr): | 2.5 µs |
| 电流 - 反向泄漏@ vr: | 1 µA @ 2500 V |
| 电容@vr, f: | - |
| 安装类型: | Chassis, Stud Mount |
| 包/箱: | Module |
| 供应商设备包: | - |
| 工作温度 - 结: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
V2P6LHM3/IVishay General Semiconductor – Diodes Division |
SCHOTTKY RECTIFIER 2A 60V SMP |
|
|
VS-80PF160WVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 80A DO203AB |
|
|
HSM120GE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 1A 20V SMBG |
|
|
RKR0503AKH#P1Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
|
SD090SB45B.T2SMC Diode Solutions |
PIV 45V IO 7.5A CHIP SIZE 90MIL |
|
|
TRS6A65F,S1QToshiba Electronic Devices and Storage Corporation |
PB-F DIODE TO-220-2L V=650 IF=6A |
|
|
BYM11-1000HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
|
|
HT18G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A TS-1 |
|
|
HSB226WKTL-ERochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
|
FSQS30A045KYOCERA Corporation |
DIODE SCHOTTKY 45V 30A TO-220 2P |
|
|
MBR60100PTE3/TURoving Networks / Microchip Technology |
DIODE SCHOTTKY 60A 100V TO-247AD |
|
|
S70GRGeneSiC Semiconductor |
DIODE GEN PURP REV 400V 70A DO5 |
|
|
JANTX1N3645Roving Networks / Microchip Technology |
DIODE GEN PURP 2KV 250MA AXIAL |
