类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, BZG05B-M |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 11 V |
宽容: | ±2% |
功率 - 最大值: | 1.25 W |
阻抗(最大)(zzt): | 8 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 8.2 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZX85C7V5-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 1.3W DO41 |
|
JAN1N4116D-1Roving Networks / Microchip Technology |
DIODE ZENER 24V DO35 |
|
MMBZ4717-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 350MW SOT23-3 |
|
ACZRW5250B-GComchip Technology |
DIODE ZENER 20V 350MW SOD123FL |
|
1PMT4120CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 30V 1W DO216 |
|
1N4919Roving Networks / Microchip Technology |
DIODE ZENER 19.2V 500MW DO35 |
|
PZU15BL,315Rochester Electronics |
DIODE ZENER 15V 250MW DFN1006-2 |
|
GDZ36B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 200MW SOD323 |
|
BZX584C15-V-G-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 200MW SOD523 |
|
BZT52B3V0-G RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 3V 410MW SOD123 |
|
1N5922P/TR12Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1.5W DO204AL |
|
MMSZ5224BT1Rochester Electronics |
DIODE ZENER 2.8V 500MW SOD123 |
|
BZX884-C15,315Nexperia |
DIODE ZENER 15V 250MW DFN1006-2 |