English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 20 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 55 Ohms |
| 电流 - 反向泄漏@ vr: | 100 nA @ 15 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-80 Variant |
| 供应商设备包: | SOD-80 QuadroMELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZX84C16-F2-0000HF |
ZENER DIODE 16V 0.35W SOT-23-3L |
|
AMMSZ5236A-HFComchip Technology |
DIODE ZENER 7.5V 500MW SOD123 |
|
JANTX1N755DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 500MW DO213AA |
|
1N5929CP/TR8Roving Networks / Microchip Technology |
DIODE ZENER 15V 1.5W DO204AL |
|
SZMMSZ4680ET1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 2.2V 500MW SOD123 |
|
1PMT5943C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 56V 3W DO216AA |
|
BZD27B5V6P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 800MW DO219AB |
|
SMBJ5344AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 5W SMBJ |
|
MMSZ4682-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.7V 500MW SOD123 |
|
1N4730A,133Nexperia |
DIODE ZENER 3.9V 1W DO41 |
|
BZG03C110-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 1.25W DO214AC |
|
SML4739AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 1W DO214AC |
|
1PGSMA160ZHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 160V 1.25W DO214AC |
