English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/356 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 24 V |
| 宽容: | ±1% |
| 功率 - 最大值: | 5 W |
| 阻抗（最大）（zzt）: | 5 Ohms |
| 电流 - 反向泄漏@ vr: | 2 µA @ 18.2 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 1 A |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | E-MELF |
| 供应商设备包: | D-5B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N5928BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 13V 1.5W DO204AL |
|
MM5Z5V6T1Rochester Electronics |
DIODE ZENER 5.6V 200MW SOD523 |
|
SMAJ4752E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 33V 2W DO214AC |
|
1PMT5935BT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 27V 3.2W POWERMITE |
|
JANTXV1N5536C-1Roving Networks / Microchip Technology |
DIODE ZENER 16V 500MW DO35 |
|
BZT52C5V1-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 410MW SOD123 |
|
PLZ30B-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW DO219AC |
|
PLZ22C-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 500MW DO219AC |
|
1N5231BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO213AA |
|
BZG04-24-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 1.25W DO214AC |
|
1N5946BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 75V 1.25W DO213AB |
|
BZG05C9V1-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 1.25W DO214AC |
|
BZT55C5V6-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW SOD80 |
