English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 40V |
| 电流 - 连续漏极 (id) @ 25°c: | 6.9A |
| rds on (max) @ id, vgs: | 25mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 1.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33.7nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1640pF @ 20V |
| 功率 - 最大值: | 1.8W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRF7313QTRIR (Infineon Technologies) |
MOSFET 2N-CH 30V 6.9A 8SO |
|
FDW2512NZRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK2631-TL-ERochester Electronics |
POWER MOSFET |
|
ALD114935SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
PSMN070-200BRochester Electronics |
35A, 200V, 0.07OHM, N-CHANNEL |
|
DMC1018UPD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 12V POWERDI5060 |
|
DMP2035UTS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 6.04A 8TSSOP |
|
FDG6302PRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
DMP2110UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
HAT2218R-EL-ERochester Electronics |
POWER, 7.5A, 30V, N-CH MOSFET |
|
DMN5L06DWK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.305A SOT-363 |
|
NTHC5513T1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V CHIPFET |
|
DMC31D5UDJ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 30V SOT963 |
