English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A |
| rds on (max) @ id, vgs: | 29mOhm @ 7.3A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1350pF @ 15V |
| 功率 - 最大值: | 5W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DMG6602SVTX-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
UM6J1NTNROHM Semiconductor |
MOSFET 2P-CH 30V 0.2A UMT6 |
|
IRFH4251DTRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
SI7923DN-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 30V 4.3A 1212-8 |
|
BSM180D12P2C101ROHM Semiconductor |
MOSFET 2N-CH 1200V 180A MODULE |
|
2N7002VSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 280MA SOT563F |
|
BUK7K15-80EXNexperia |
MOSFET 2 N-CH 80V 23A LFPAK56D |
|
SLA5060Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 60V 6A 12-SIP |
|
CA5130ERochester Electronics |
OPERATIONAL AMPLIFIER W/MOSFET I |
|
UPA2756GR-E1-ATRochester Electronics |
POWER, N-CHANNEL MOSFET |
|
TC2320TG-GRoving Networks / Microchip Technology |
MOSFET N/P-CH 200V 8SOIC |
|
DMN3016LDN-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 7.3A 8VDFN |
|
TT8M2TRROHM Semiconductor |
MOSFET N/P-CH 30V/20V 2.5A TSST8 |
