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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | Silicon Carbide (SiC) |
| 漏源电压 (vdss): | 1200V (1.2kV) |
| 电流 - 连续漏极 (id) @ 25°c: | 204A (Tc) |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | 4V @ 35.2mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 23000pF @ 10V |
| 功率 - 最大值: | 1130W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | - |
| 包/箱: | Module |
| 供应商设备包: | Module |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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