English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 4 N-Channel (Half Bridge) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A |
| rds on (max) @ id, vgs: | 300mOhm @ 3A, 4V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 320pF @ 10V |
| 功率 - 最大值: | 4.8W |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 包/箱: | 15-SIP Exposed Tab, Formed Leads |
| 供应商设备包: | 15-ZIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI5902BDC-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 4A 1206-8 |
|
FDMS3668SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/18A POWER56 |
|
FDPC8012SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 13A/26A PWR CLP |
|
EM6M2T2RROHM Semiconductor |
MOSFET N/P-CH 20V 0.2A EMT6 |
|
EPC2102ENGRTEPC |
GANFET 2 N-CHANNEL 60V 23A DIE |
|
SI1967DH-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 1.3A SC70-6 |
|
BSG0813NDIATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 25V 19A/33A TISON8 |
|
TSM300NB06DCR RLGTSC (Taiwan Semiconductor) |
DUAL N-CHANNEL POWER MOSFET 60V, |
|
NTQD6866R2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RFD8P05SM9AS2463Rochester Electronics |
8A, 50V, 0.300 OHM, P-CHANNEL |
|
SI4599DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 40V 6.8A 8SOIC |
|
MSCSM120HM50CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
|
UPA2550T1H-T2-ATRochester Electronics |
POWER, 5A, 12V, P-CHANNEL MOSFET |
