English
简体中文
GANFET TRANS SYM 100V BUMPED DIE
RF ETHERNET RJ-45/RS-232 802.11
IC RTC CLK/CALENDAR PAR 28DIP
24VDC, 7 MA, 8 INPUTS, 12 TO 24
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 100V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.7A |
| rds on (max) @ id, vgs: | 70mOhm @ 2A, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 600µA |
| 栅极电荷 (qg) (max) @ vgs: | 0.73nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | 75pF @ 50V |
| 功率 - 最大值: | - |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AON6946Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 14A/18A 8DFN |
|
DMC2057UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
FC8V33030LPanasonic |
MOSFET 2N-CH 33V 6.5A WMINI8 |
|
AUIRF7309QTRIR (Infineon Technologies) |
MOSFET N/P-CH 30V 4A/3A 8SO |
|
SI4590DY-T1-GE3Vishay / Siliconix |
MOSFET N/P CHAN 100V SO8 DUAL |
|
DMC4029SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 40V 7A/5.1A 8SO |
|
IPG20N06S4L14AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 60V 20A 8TDSON |
|
IPI60R190C6Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
SQ4940AEY-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 8A 8SOIC |
|
FDJ1028NRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTLGD3502NT2GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 4.3A/3.6A 6DFN |
|
TQM110NB04DCR RLGTSC (Taiwan Semiconductor) |
40V, 50A, DUAL N-CHANNEL POWER M |
|
2SK3634-Z-AZRochester Electronics |
6A, 200V, N-CHANNEL MOSFET |