MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
IC REG LIN 4.75V 700MA SOT89-5
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 4.3A, 3.6A |
rds on (max) @ id, vgs: | 60mOhm @ 4.3A, 4.5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 4nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 480pF @ 10V |
功率 - 最大值: | 1.74W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-VDFN Exposed Pad |
供应商设备包: | 6-DFN (3x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TQM110NB04DCR RLGTSC (Taiwan Semiconductor) |
40V, 50A, DUAL N-CHANNEL POWER M |
|
2SK3634-Z-AZRochester Electronics |
6A, 200V, N-CHANNEL MOSFET |
|
NTLLD4901NFTWGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 5.5A/6.3A 8WDFN |
|
DMP32D9UDA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V X2-DFN0806 |
|
CSD75208W1015Texas Instruments |
MOSFET 2P-CH 20V 1.6A 6WLP |
|
FDR8702HRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
DMN601VK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.305A SOT-563 |
|
FC6943010RPanasonic |
MOSFET 2N-CH 30V 0.1A SSMINI6 |
|
SQ4949EY-T1_BE3Vishay / Siliconix |
MOSFET 2 P-CH 30V 7.5A 8SOIC |
|
UPA2751GR-E1-ATRochester Electronics |
POWER, N-CHANNEL MOSFET |
|
APTC80TA15PGRoving Networks / Microchip Technology |
MOSFET 6N-CH 800V 28A SP6P |
|
DMN2028UFU-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 20V 7.9A UDFN2020-6 |
|
SIA928DJ-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V POWERPAK SC70-6 |