English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 12V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.4A |
| rds on (max) @ id, vgs: | 90mOhm @ 3A, 4.5V |
| vgs(th) (最大值) @ id: | 800mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 467pF @ 6V |
| 功率 - 最大值: | 700mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-WDFN Exposed Pad |
| 供应商设备包: | 6-WDFN (2x2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD86330Q3DTexas Instruments |
MOSFET 2N-CH 25V 20A 8LSON |
|
FC6546010RPanasonic |
MOSFET 2N-CH 60V 0.1A SMINI6-F3 |
|
HTMN5130SSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 55V 2.6A 8SOIC |
|
IPG20N10S4L22AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 100V 20A TDSON-8 |
|
SI4228DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 25V 8A 8-SOIC |
|
SQ4946AEY-T1_BE3Vishay / Siliconix |
MOSFET 2N-CH 60V 7A |
|
FDG6317NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 0.7A SC70-6 |
|
DMC25D1UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 25V/12V TSOT26 |
|
ALD310708ASCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16SOIC |
|
EM6K7T2RROHM Semiconductor |
MOSFET 2N-CH 20V 0.2A EMT6 |
|
DMN33D8LDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 0.25A |
|
SLA5059Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 60V 4A 12-SIP |
|
FDY2000PZRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
