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MOSFET 4N-CH 10.6V 16SOIC
IC SRAM 4.5MBIT PARALLEL 100TQFP
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| 类型 | 描述 |
|---|---|
| 系列: | EPAD®, Zero Threshold™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | 4 N-Channel, Matched Pair |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 10.6V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | 500Ohm @ 4V |
| vgs(th) (最大值) @ id: | 20mV @ 1µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 2.5pF @ 5V |
| 功率 - 最大值: | 500mW |
| 工作温度: | 0°C ~ 70°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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