类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
QS8K11TCRROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET |
|
PMDPB95XNE,115Rochester Electronics |
SMALL SIGNAL MOSFET |
|
TSM6502CR RLGTSC (Taiwan Semiconductor) |
MOSFET N/P-CH 60V 24A/18A 8PDFN |
|
NVMFD5C650NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 111A S08FL |
|
BUK7K32-100EXNexperia |
MOSFET 2N-CH 100V 29A LFPAK56D |
|
ALD212900SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
MCH6660-TL-HRochester Electronics |
SMALL SIGNAL FET |
|
ALD110908SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
DMP3085LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 30V 3.9A 8SO |
|
FDMD8260LRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
ECH8697R-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 24V 10A SOT28 |
|
FDS8947ARochester Electronics |
P-CHANNEL POWER MOSFET |
|
NVMFD5C466NT1GSanyo Semiconductor/ON Semiconductor |
40V 8.1 MOHM T8 S08FL DUA |