English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.7A (Ta) |
| rds on (max) @ id, vgs: | 120mOhm @ 4A, 4.5V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.1nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 299pF @ 15V |
| 功率 - 最大值: | 1.7W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-VDFN Exposed Pad |
| 供应商设备包: | DFN3020B-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TT8K1TRROHM Semiconductor |
MOSFET 2N-CH 20V 2.5A TSST8 |
|
UT6MA3TCRROHM Semiconductor |
20V NCH+PCH MIDDLE POWER MOSFET |
|
SSM6N39TU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2 N-CHANNEL 20V 1.6A UF6 |
|
SI7938DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 60A PPAK SO-8 |
|
NTLJD3183CZTAGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
FDMD8630Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 38A POWER5X6 |
|
NTGD4161PT1GRochester Electronics |
P-CHANNEL POWER MOSFET |
|
BSO207PHXUMA1Rochester Electronics |
PFET, 5A I(D), 20V, 0.045OHM, 2- |
|
DMHC6070LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N/2P-CHA 60V 3.1A 8SO |
|
RF1S50N06Rochester Electronics |
50A, 60V, 0.022 OHM, N-CHANNEL |
|
STS4DNF60LSTMicroelectronics |
MOSFET 2N-CH 60V 4A 8-SOIC |
|
APTM100A13SCGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 65A SP6 |
|
2N7002VAC-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.28A SOT-563 |
