English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.8A |
| rds on (max) @ id, vgs: | 40mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 9nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 325pF @ 15V |
| 功率 - 最大值: | 2.3W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQJB60EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
QH8JC5TCRROHM Semiconductor |
-60V DUAL PCH+PCH SMALL SIGNAL M |
|
FX20KMJ-3#B00Rochester Electronics |
HIGH SPEED SWITCHING P CHANNEL , |
|
NVMFD5C650NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 111A S08FL |
|
IRF441Rochester Electronics |
TRANS MOSFET N-CH 450V 8A |
|
UP0497900LPanasonic |
MOSFET N/P-CH 50V/30V SSMINI-6P |
|
QS8K51TRROHM Semiconductor |
MOSFET 2N-CH 30V 2A TSMT8 |
|
AO4629Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 6A/5.5A 8SOIC |
|
BSS8402DWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 60V/50V |
|
IRF7314PBFRochester Electronics |
P-CHANNEL POWER MOSFET |
|
IRF7313PBFRochester Electronics |
HEXFET POWER MOSFET |
|
QS6K21TRROHM Semiconductor |
MOSFET 2N-CH 45V 1A TSMT6 |
|
SSM6N951L,EFFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET RDSON: 4.4MO |
