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MOSFET 2N-CH 30V 13A/28A PQFN
IC SRAM 4MBIT PARALLEL 32TSOP II
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| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A, 28A |
| rds on (max) @ id, vgs: | 8.6mOhm @ 12A, 10V |
| vgs(th) (最大值) @ id: | 2.35V @ 25µA |
| 栅极电荷 (qg) (max) @ vgs: | 12nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1060pF @ 15V |
| 功率 - 最大值: | 2.4W, 3.4W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 18-PowerVQFN |
| 供应商设备包: | PQFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
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电话: 00852-52612101
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