English
简体中文
MOSFET 2 N-CH 60V POWERPAK SO8
1:4 CORE & WIRE TRANSFORMER, 1.5
RF SHIELD 0.827" X 0.827" T/H
PLUG-IN SIGNAL CONDITIONER
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 23.5A (Tc) |
| rds on (max) @ id, vgs: | 33.6mOhm @ 4.8A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18.5nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 714pF @ 30V |
| 功率 - 最大值: | 42W (Tc) |
| 工作温度: | -55°C ~ 175°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | PowerPAK® SO-8 Dual |
| 供应商设备包: | PowerPAK® SO-8 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTLUD3A260PZTAGSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 1.3A 6UDFN |
|
MPIC2117PRochester Electronics |
BUFFER/INVERTER BASED MOSFET DRI |
|
ALD210804PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
SI7236DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 20V 60A PPAK SO-8 |
|
FDMB2307NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 6MLP |
|
IRLHS6276TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 20V 4.5A PQFN |
|
SH8J31GZETBROHM Semiconductor |
60V PCH+PCH MIDDLE POWER MOSFET |
|
ALD212914SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
|
NTMFD5C470NLT1GSanyo Semiconductor/ON Semiconductor |
T6 40V LL S08FL DS |
|
CMLDM7484 TR PBFREECentral Semiconductor |
MOSFET N/P-CH 30V 0.45A SOT-563 |
|
IPA60R190E6Rochester Electronics |
600V 0.19OHM N-CHANNEL MOSFET |
|
FDR8308PRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
BSZ15DC02KDHXTMA1IR (Infineon Technologies) |
MOSFET N/P-CH 20V 5.1/3.2A TDSON |