类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | - |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 4A (Ta), 3.4A (Ta) |
rds on (max) @ id, vgs: | 34mOhm @ 3A, 4.5V |
vgs(th) (最大值) @ id: | 900mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21.7nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 660pF @ 10V |
功率 - 最大值: | 490mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-UDFN Exposed Pad |
供应商设备包: | 6-HUSON-EP (2x2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSO303PHXUMA1Rochester Electronics |
7A, 30V, 0.021OHM, 2-ELEMENT, P |
|
IRF7328PBFRochester Electronics |
IRF7328 - 20V-250V P-CHANNEL POW |
|
DMC3730UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 T&R |
|
ALD111933PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
ALD210814PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
|
EFC6602R-TRRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
HUFA76407DK8TRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIA527DJ-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 12V 4.5A SC-70-6 |
|
FDS8858CZSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 8.6/7.3A 8SOIC |
|
SSM6P36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
SLA5068 LF853Sanken Electric Co., Ltd. |
MOSFET 6N-CH 60V 7A 15-SIP |
|
SSM6N36FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.5A ES6 |
|
DMC1029UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 12V 6UDFN |