English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.6A, 7.3A |
| rds on (max) @ id, vgs: | 17mOhm @ 8.6A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1205pF @ 15V |
| 功率 - 最大值: | 900mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SSM6P36TU,LFToshiba Electronic Devices and Storage Corporation |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
|
SLA5068 LF853Sanken Electric Co., Ltd. |
MOSFET 6N-CH 60V 7A 15-SIP |
|
SSM6N36FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 20V 0.5A ES6 |
|
DMC1029UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 12V 6UDFN |
|
SP8M51FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET |
|
AUIRF7316QTRIR (Infineon Technologies) |
MOSFET 2P-CH 30V 4.9A 8SOIC |
|
DMN2025UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V U-DFN2020-6 |
|
FDMS3686SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 13A/23A POWER56 |
|
FDS6993Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
UPA675T-T1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
EPC2103EPC |
GAN TRANS SYMMETRICAL HALF BRIDG |
|
IRFH4257DTRPBFRochester Electronics |
IRFH4257 - HEXFET POWER MOSFET |
|
MSCSM120HM16CT3AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP3F |
