类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 8A |
rds on (max) @ id, vgs: | 19mOhm @ 8A, 10V |
vgs(th) (最大值) @ id: | 2.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 18nC @ 10V |
输入电容 (ciss) (max) @ vds: | 888pF @ 15V |
功率 - 最大值: | 2W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
UM6K31NFHATCNROHM Semiconductor |
2.5V DRIVE NCH+NCH MOSFET |
|
FPF1C2P5BF07ARochester Electronics |
INSULATED GATE BIPOLAR TRANSISTO |
|
SIS932EDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH DL 30V PWRPAK 1212-8 |
|
FDG6301N-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 0.22A SC70-6 |
|
NVMFS5832NLT1GRochester Electronics |
40V, 0.0072OHM, N-CHANNEL, MOSF |
|
NX1029X,115Nexperia |
MOSFET N/P-CH 60V/50V SOT666 |
|
MCH6663-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 1.8/1.5A MCPH6 |
|
VT6M1T2CRROHM Semiconductor |
MOSFET N/P-CH 20V 0.1A VMT6 |
|
UPA573T-T1-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
FDS6911Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 7.5A 8SOIC |
|
2N7002DWQ-7-FZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 0.23A SOT363 |
|
SI4210DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 6.5A 8-SOIC |
|
IRFF9211Rochester Electronics |
AUTOMOTIVE HEXFET P-CHANNEL |