English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 550mA |
| rds on (max) @ id, vgs: | 850mOhm @ 400mA, 4.5V |
| vgs(th) (最大值) @ id: | 1.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 1.14nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 87pF @ 10V |
| 功率 - 最大值: | 330mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-563, SOT-666 |
| 供应商设备包: | SOT-666 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PSMN4R8-100BSE,118Rochester Electronics |
N CHANNEL 100V 4.8 MOHM STANDAR |
|
SH8K37GZETBROHM Semiconductor |
4V DRIVE NCH+NCH MOSFET. SH8K37G |
|
TPC8408,LQ(SToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 40V 6.1A/5.3A 8SOP |
|
NTJD4158CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V/20V SOT363 |
|
PSMN035-150BRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 5 |
|
SI7998DP-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 25A PPAK SO-8 |
|
SIZF916DT-T1-GE3Vishay / Siliconix |
MOSFET N-CH DUAL 30V |
|
SQJ946EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK SO8 |
|
RM9926Rectron USA |
MOSFET 2 N-CHANNEL 20V 6A 8SOP |
|
SI7949DP-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 60V 3.2A PPAK SO-8 |
|
CJ3139KDW-GComchip Technology |
MOSFET 2PCH 20V 660MA SOT363 |
|
UT6K3TCRROHM Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET |
|
SI4946CDY-T1-GE3Vishay / Siliconix |
MOSFET N-CHAN DUAL 60V SO-8 |
