English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | - |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 15.7A (Ta), 100A (Tc) |
| rds on (max) @ id, vgs: | 11.5mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 650pF @ 15V |
| 功率 - 最大值: | 3.6W, 4.3W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerWDFN |
| 供应商设备包: | 8-Power33 (3x3) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NDS9947Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
DMN2024UTS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSSOP-8 T&R |
|
FDC6401NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 3A SSOT-6 |
|
ALD310704SCLAdvanced Linear Devices, Inc. |
MOSFET 4 P-CH 8V 16SOIC |
|
DMNH6042SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CH 60V 16.7A 8SO |
|
IRFHE4250DTRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IRF9389TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 6.8A/4.6A 8-SO |
|
ALD110908ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
SSM6N357R,LFToshiba Electronic Devices and Storage Corporation |
SMALL LOW R-ON MOSFETS DUAL NCH |
|
FDW2501NZRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIZ256DT-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 70 V (D-S) MOSFET |
|
SI7942DP-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 100V 3.8A PPAK SO-8 |
|
VEC2616-TL-HRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
