类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 25V |
电流 - 连续漏极 (id) @ 25°c: | 86A (Tc), 303A (Tc) |
rds on (max) @ id, vgs: | 2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 35µA, 2.1V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 20nC, 53nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 1735pF @ 13V, 4765pF @ 13V |
功率 - 最大值: | 156W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 32-PowerVFQFN |
供应商设备包: | 32-PQFN (6x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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