MOSFET 2N-CH 30V 6.2A UDFN2020-6
RF SHIELD 0.5" X 2.25" T/H
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 6.2A |
rds on (max) @ id, vgs: | 30mOhm @ 5.8A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 10.6nC @ 10V |
输入电容 (ciss) (max) @ vds: | 500pF @ 15V |
功率 - 最大值: | 1W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-UDFN Exposed Pad |
供应商设备包: | U-DFN2020-6 (Type B) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOTS32338CAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 6-TSOP |
|
ALD111933SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
FDMS7606Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SQJB68EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 100V POWERPAK SO8 |
|
NVMFD5C446NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 145A S08FL |
|
APTM100TA35FPGRoving Networks / Microchip Technology |
MOSFET 6N-CH 1000V 22A SP6-P |
|
FDG6301NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 0.22A SC70-6 |
|
ALD110914PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
CPH6339-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
NVMFD5489NLWFT3GRochester Electronics |
N-CHANNEL, MOSFET |
|
NVMFD5877NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 6A SO8FL |
|
FDMS9408Rochester Electronics |
N-CHANNEL MOSFET |
|
FDS8958Rochester Electronics |
P-CHANNEL POWER MOSFET |