English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 200V |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| rds on (max) @ id, vgs: | 7Ohm @ 1A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| 输入电容 (ciss) (max) @ vds: | 110pF @ 25V |
| 功率 - 最大值: | - |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-VDFN Exposed Pad |
| 供应商设备包: | 8-DFN (4x4) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD87351Q5DTexas Instruments |
MOSFET 2N-CH 30V 32A 8LSON |
|
MIC94051BM4TRRochester Electronics |
4-TERMINAL SYMFET P CHANNEL MOSF |
|
EM5K5T2RROHM Semiconductor |
MOSFET 2N-CH 30V 0.3A EMT5 |
|
SI5504BDC-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 30V 4A 1206-8 |
|
NTQD6866R2GRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
DMG1016VQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT563 |
|
SQJB00EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK SO8 |
|
DMP2075UFDB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 6UDFN |
|
BUK7K6R2-40EXNexperia |
MOSFET 2N-CH 40V 40A 56LFPAK |
|
ALD110900PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
DMN1002UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFETN-CHAN 12V X4-DSN3118-6 |
|
NVMFD5853NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 12A SO8FL |
|
SI7216DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 40V 6A PPAK 1212-8 |
